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| savantic semiconductor product specification silicon npn power transistors 2SC3387 d escription with to-3pn package high breakdown voltage fast switching speed applications for horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i cm collector current-peak 10 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3387 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =4v; i c =0 10 a h fe dc current gain i c =0.3a ; v ce =5v 15 savantic semiconductor product specification 3 silicon npn power transistors 2SC3387 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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